Samsung, der er inde i noget af et stormvejr i patent sagerne med Apple, har startet deres produktion af 64Gb 3bps (bit per cell) NAND flash hukommelse.

De nye NAND flash hukommelses chip er baseret på 20 nm teknologi.

Samsung’s 20nm-class, 64Gb 3-bit NAND has a 60 percent higher productivity level than 30nm-class, 32Gb 3-bit NAND. The device also offers improved performance by applying Toggle DDR 1.0 specifications, compared to those of SDR based 30nm-class NAND chips.