Samsung frigiver 30 nm DDR3 DRAM
Samsung har frigivet deres nye 30 nm DDR3 DRAM chip. Der er tale om low power chip med en kapacitet på 2 gbit og 4Gbit med en hastighed på 1600MHz.
De nye 30 nm chip er både til UDIMM og SODIMM til stationære og bærbare computere. De nye 30 nm chip skulle være 20 procent hurtigere end de tidligere 40 nm chip.
Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it started the industry's first production of four gigabit (Gb), low power double-data-rate 2 (LPDDR2) DRAM using 30 nanometer (nm) class* technology earlier this month. The mobile DRAM chip will help the market to deliver thinner, lighter smartphones, tablets and other mobile devices, with longer battery life, at a level unachievable until now.
"Mass production of 4Gb LPDDR2 is a tremendous advancement for the mobile industry, one that will enable our OEM customers to move quickly in launching better differentiated high-performance mobile devices into the market." said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. "Samsung will continue to take the initiative in accelerating growth of the market by providing high-performance, high-density green memory products as often and as early as possible."